文(wen)章來源：中國(guo)電子信息產業集團(tuan)公司 發布時間：2010-12-18
中(zhong)(zhong)國電(dian)子(zi)所屬(shu)上海華(hua)虹(hong)(hong)NEC公(gong)司近日(ri)宣(xuan)布完成金(jin)屬(shu)氧化物(wu)半導體(ti)場(chang)效(xiao)應(ying)晶體(ti)管(guan)（MOSFET）400V高(gao)壓工(gong)(gong)藝(yi)的(de)研(yan)發(fa)，成功(gong)(gong)進入高(gao)壓MOSFET代(dai)工(gong)(gong)市場(chang)。通(tong)過(guo)技術攻關，華(hua)虹(hong)(hong)NEC公(gong)司成功(gong)(gong)將Trench結構應(ying)用(yong)在高(gao)壓 400V MOSFET工(gong)(gong)藝(yi)中(zhong)(zhong)，該工(gong)(gong)藝(yi)可應(ying)用(yong)于熒光燈、臺(tai)式機(ji)、筆記(ji)本電(dian)腦、液晶電(dian)視、顯(xian)示器等(deng)的(de)交直(zhi)流電(dian)源(yuan)和(he)適(shi)配器上，與(yu)傳(chuan)統的(de)平面結構VDMOS相比，該工(gong)(gong)藝(yi)可有效(xiao)降低(di)產(chan)品(pin)的(de)導通(tong)電(dian)阻，功(gong)(gong)耗低(di)、效(xiao)率高(gao)，能更好地滿足(zu)市場(chang)和(he)客(ke)戶需(xu)求，下一步華(hua)虹(hong)(hong)NEC還將繼(ji)續研(yan)發(fa)推出(chu)500V-800V的(de)MOSFET產(chan)品(pin)工(gong)(gong)藝(yi)。